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Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications

Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications( )
Author: Franco, Jacopo
Kaczer, Ben
Groeseneken, Guido
Series title:Springer Series in Advanced Microelectronics
ISBN:978-94-024-0205-6
Publication Date:Aug 2016
Publisher:Springer
Book Format:Paperback
List Price:AUD $207.95
Book Description:

This book explores the reliability of novel (Si)Ge channel quantum well pMOSFET technology. It proposes a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.

Book Details
Pages:187
Detailed Subjects: Technology & Engineering / Electronics / Semiconductors
Physical Dimensions (W X L X H):15.596 x 23.393 x 1.118 cm
Book Weight:3.226 Kilograms



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