Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications |
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Author:
| Franco, Jacopo Kaczer, Ben Groeseneken, Guido |
Series title: | Springer Series in Advanced Microelectronics |
ISBN: | 978-94-024-0205-6 |
Publication Date: | Aug 2016 |
Publisher: | Springer
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Book Format: | Paperback |
List Price: | AUD $207.95 |
Book Description:
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This book explores the reliability of novel (Si)Ge channel quantum well pMOSFET technology. It proposes a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.
This book explores the reliability of novel (Si)Ge channel quantum well pMOSFET technology. It proposes a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.