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Local Charge Carrier Diffusion and Recombination in InGaN Quantum Wells

Local Charge Carrier Diffusion and Recombination in InGaN Quantum Wells( )
Author: Danhof, Julia
Editor: Fraunhofer IAF, Freiburg,
Ambacher, Oliver
Series title:Science for Systems Ser.
Publication Date:Oct 2013
Publisher:Fraunhofer IRB Verlag
Book Format:Paperback
List Price:USD $64.00
Book Description:

Light emitting InGaN/GaN quantum wells were studied with the help of confocal micro photoluminescence microscopy. The focus is put on charge carrier dynamics in the quantum wells. Recombination rates of different recombination mechanisms are investigated, especially considering the efficiency loss of InGaN based light emitting diodes at high charge carrier densities, known as droop. This is done with the help of the so called ABC model and measurements of the charge carrier density...
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Detailed Subjects: Science / Physics / General
Physical Dimensions (W X L X H):5.772 x 8.19 Inches

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