Reliability of High Mobility Sige Channel MOSFETs for Future CMOS Applications |
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Author:
| Franco, Jacopo Kaczer, Ben Groeseneken, Guido |
Series title: | Springer Series in Advanced Microelectronics Ser. |
ISBN: | 978-94-007-7662-3 |
Publication Date: | Oct 2013 |
Publisher: | Springer Netherlands
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Imprint: | Springer |
Book Format: | Hardback |
List Price: | USD $109.99 |
Book Description:
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This book explores the reliability of novel (Si)Ge channel quantum well pMOSFET technology. It proposes a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.
This book explores the reliability of novel (Si)Ge channel quantum well pMOSFET technology. It proposes a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.