Hf-Based High-K Dielectrics Process Development, Performance Characterization, and Reliability |
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| Author:
| Kim, Young Hee
Lee, Jack C. |
| Series title: | Synthesis Lectures on Solid State Materials and Devices Ser. |
| ISBN: | 978-1-59829-004-2 |
| Publication Date: | Jun 2005 |
| Publisher: | Morgan & Claypool Publishers
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| Book Format: | Paperback |
| List Price: | AUD $61.95AUD $50.00 |
Book Description:
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In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru-Ta alloy, Ru) is investigated. Hard breakdown and soft breakdown, particularly the Weibull slopes, are studied under constant voltage stress. Dynamic stressing is also used. The combination of trapping and detrapping contributed to the enhancement of the projected lifetime.
In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru-Ta alloy, Ru) is investigated. Hard breakdown and soft breakdown, particularly the Weibull slopes, are studied under constant voltage stress. Dynamic stressing is also used. The combination of trapping and detrapping contributed to the enhancement of the projected lifetime.