Research on the Radiation Effects and Compact Model of Sige HBT |
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| Author:
| Sun, Yabin |
| Series title: | Springer Theses Ser. |
| ISBN: | 978-981-13-5181-5 |
| Publication Date: | Jan 2019 |
| Publisher: | Springer
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| Book Format: | Paperback |
| List Price: | USD $149.99USD $109.99 |
Book Description:
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This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse...
More DescriptionThis book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.