SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices |
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| Author:
| Cressler, John D. |
| ISBN: | 978-1-351-82610-5 |
| Publication Date: | Dec 2017 |
| Publisher: | Taylor & Francis Group
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| Imprint: | CRC Press |
| Book Format: | Digital (delivered electronically) |
| List Price: | USD $64.95USD $220.00USD $300.00 |
Book Description:
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Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on the materials science aspects of silicon heterostructure. It defines and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. The book covers modern SiGe epitaxial growth techniques, EPI defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. Drawing on the...
More Description
Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on the materials science aspects of silicon heterostructure. It defines and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. The book covers modern SiGe epitaxial growth techniques, EPI defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. Drawing on the talents of an international panel of experts, additional topics include the mechanisms for carbon doping in SiGe HBTs, contact metallization, and selective etching techniques for Si/SiGe.