Strained-Si Heterostructure Field Effect Devices |
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| Author:
| Chattopadhyay, S.
Maiti, C. K.
Bera, L. K. |
| Series title: | Series in Materials Science and Engineering Ser. |
| ISBN: | 978-0-7503-0993-6 |
| Publication Date: | Jan 2007 |
| Publisher: | CRC Press LLC
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| Book Format: | Hardback |
| List Price: | USD $250.00 |
Book Description:
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Silicon-Germanium (SiGe), Silicon-Germanium-Carbon (SiGeC), and strained-Si are becoming key materials with great potential for use in advanced integrated circuits. This book brings together new developments in the area of strained Silicon heterostructure devices using binary (SiGe), ternary (SiGeC), and strained-Si materials in a single text that covers the material aspects, principles, and design of heterostructure devices, fabrication, and applications of strained-Si, SiGe, SiGeC...
More DescriptionSilicon-Germanium (SiGe), Silicon-Germanium-Carbon (SiGeC), and strained-Si are becoming key materials with great potential for use in advanced integrated circuits. This book brings together new developments in the area of strained Silicon heterostructure devices using binary (SiGe), ternary (SiGeC), and strained-Si materials in a single text that covers the material aspects, principles, and design of heterostructure devices, fabrication, and applications of strained-Si, SiGe, SiGeC hetero-FETs, and other novel emerging transistor architectures. The book is aimed primarily at scientists and engineers involved in research and development of high performance devices and circuits for RFCMOS and wireless communication applications.