Reliability of High Mobility Sige Channel MOSFETs for Future CMOS Applications |
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| Author:
| Franco, Jacopo
Kaczer, Ben
Groeseneken, Guido |
| Series title: | Springer Series in Advanced Microelectronics Ser. |
| ISBN: | 978-94-007-7663-0 |
| Publication Date: | Oct 2013 |
| Publisher: | Springer London, Limited
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| Book Format: | Ebook |
| List Price: | USD $129.00 |
Book Description:
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This book explores the reliability of novel (Si)Ge channel quantum well pMOSFET technology. It proposes a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.
This book explores the reliability of novel (Si)Ge channel quantum well pMOSFET technology. It proposes a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.