Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications |
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| Author:
| Franco, Jacopo
Kaczer, Ben
Groeseneken, Guido |
| Series title: | Springer Series in Advanced Microelectronics Ser. |
| ISBN: | 978-94-024-0205-6 |
| Publication Date: | Aug 2016 |
| Publisher: | Springer Netherlands
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| Imprint: | Springer |
| Book Format: | Paperback |
| List Price: | USD $109.99USD $109.99 |
Book Description:
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This book explores the reliability of novel (Si)Ge channel quantum well pMOSFET technology. It proposes a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.
This book explores the reliability of novel (Si)Ge channel quantum well pMOSFET technology. It proposes a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.